to-220f plastic-encapsulate transistors 2SD2012 transistor (npn) features z audio frequency power amplifier applications z high dc current gain z low saturation voltage z high power dissipation maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 60 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 7 v i c collector current -continuous 3 a p c collector power dissipation 2 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100 a , i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c =50ma, i b =0 1 60 v emitter-base breakdown voltage v (br)ebo i e =100 a, i c =0 7 v collector cut-off current i cbo v cb =60v, i e =0 100 a emitter cut-off current i ebo v eb =7v, i c =0 100 a h fe1 v ce =5v, i c =0.5a 100 320 dc current gain h fe2 v ce =5v, i c =2a 20 collector-emitter saturation voltage v ce(sat) i c =2a, i b =0.2a 1 v base-emitter voltage v be v ce =5v, i c =0.5a 1 v transition frequency f t v ce =5v, i c =0.5a 3 mhz collector capacitance cob v cb =10v, i e =0,f=1mhz 35 pf to ? 220f 1. base 2. collector 3. emitter 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,mar,2012
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1 10 100 1000 100 1 10 100 0 25 50 75 100 125 150 0 500 1000 1500 2000 2500 1 10 100 1000 100 1000 0.1 1 10 1 10 100 1000 1 10 100 1000 10 100 1000 0123456 0 100 200 300 400 500 600 700 800 1 10 100 1000 1 10 100 1000 v ce =5v collcetor current i c (ma) base-emmiter voltage v be (v) i c v be ?? ta=100 ta=25 i c f t ?? transition frequency f t (mhz) collector current i c (ma) v ce =5v ta=25 collector power dissipation p c (mw) ambient temperature t a ( ) p c ?? t a 2SD2012 collector current i c (ma) base-emitter saturation voltage v besat (mv) i c v besat ?? =10 ta=100 ta=25 2000 3000 500 20 cob cib capacitance c (pf) reverse voltage v (v) v cb / v eb c ob / c ib ?? f=1mhz i e =0/i c =0 ta=25 20 dc current gain h fe collector current i c (ma) ta=100 ta=25 v ce =5v i c h fe ?? 3000 5ma 4.5ma 4ma 3.5ma 3ma 2.5ma 2ma 1.5ma 1ma i b =0.5ma collector current i c (ma) collector-emitter voltage v ce (v) static characteristic common emitter ta=25 3000 =10 ta=100 ta=25 collector-emitter saturation voltage v cesat (mv) collector current i c (ma) i c v cesat ?? 3000 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,mar,2012
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